1/7 preliminary data may 2002 this is preliminary information on a new product now in development or undergoing evaluation. details are subject to change wit hout notice. STB160NF3LL n-channel 30v - 0.0026 w - 160a d 2 pak stripfet? ii power mosfet n typical r ds (on) = 0.0026 w n low threshold drive n ultra low on-resistance n logic level device n 100% avalanche tested n surface-mounting d 2 pak (to-263) power package in tube (no suffix) or in tape & reel (suffix t4) description this power mosfet is the latest development of stmicroelectronis unique "single feature size?" strip-based process. the resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. applications n high current, high switching speed n motor control, audio amplifiers n dc-dc & dc-ac converters n solenoid and relay drivers type v dss r ds(on) i d st160nf3ll 30 v <0.003 w 160 a 1 3 d 2 pak to-263 (suffix t4) absolute maximum ratings ( ) pulse width limited by safe operating area. (*) current limited by package (1) starting t j = 25 o c, i d = 80a, v dd = 20v symbol parameter value unit v ds drain-source voltage (v gs = 0) 30 v v dgr drain-gate voltage (r gs = 20 k w ) 30 v v gs gate- source voltage 15 v i d ( * ) drain current (continuous) at t c = 25c 160 a i d drain current (continuous) at t c = 100c 160 a i dm ( ) drain current (pulsed) 640 a p tot total dissipation at t c = 25c 300 w derating factor 2 w/c e as (1) single pulse avalanche energy 1.2 j t stg storage temperature -55 to 175 c t j max. operating junction temperature internal schematic diagram
STB160NF3LL 2/7 thermal data electrical characteristics (t case = 25 c unless otherwise specified) off on (* ) dynamic rthj-case rthj-amb t l thermal resistance junction-case thermal resistance junction-ambient maximum lead temperature for soldering purpose max max 0.5 62.5 300 c/w c/w c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a v gs = 0 30 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 125c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 15 v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 m a 1v r ds(on) static drain-source on resistance v gs = 10 v i d = 80 a v gs = 4.5 v i d = 80 a 0.0026 0.0032 0.0030 0.0043 w w symbol parameter test conditions min. typ. max. unit g fs (*) forward transconductance v ds = 15 v i d =80 a 60 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v f = 1 mhz v gs = 0 6200 1720 300 pf pf pf
3/7 STB160NF3LL switching on (* ) switching off (* ) source drain diode (* ) (*) pulsed: pulse duration = 300 s, duty cycle 1.5 %. ( ) pulse width limited by t jmax symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd = 15 v i d = 80 a r g = 4.7 w v gs = 4.5 v (resistive load, figure 3) 50 350 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =24v i d =160a v gs =5v 95 25 45 125 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 15 v i d = 80 a r g = 4.7 w, v gs = 4.5 v (resistive load, figure 3) 150 120 ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 160 640 a a v sd (*) forward on voltage i sd = 160 a v gs = 0 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 160 a di/dt = 100a/s v dd = 15 v t j = 150c (see test circuit, figure 5) 90 200 5 ns nc a electrical characteristics (continued)
STB160NF3LL 4/7 fig. 1: unclamped inductive load test circuit fig. 1: unclamped inductive load test circuit fig. 2: unclamped inductive waveform fig. 3: switching times test circuits for resistive load fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times
5/7 STB160NF3LL dim. mm. inch. min. typ. max. min. typ. typ. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.028 0.037 b2 1.14 1.7 0.045 0.067 c 0.45 0.6 0.018 0.024 c2 1.21 1.36 0.048 0.054 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.394 0.409 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.591 0.624 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.069 m 2.4 3.2 0.094 0.126 r 0.4 0.015 v2 0 8 0 8 d 2 pak mechanical data
STB160NF3LL 6/7 dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0075 0.082 r50 1.574 t 0.25 0.35 .0.0098 0.0137 w 23.7 24.3 0.933 0.956 dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data * on sales type tube shipment (no suffix)* tape and reel shipment (suffix t4)* d 2 pak footprint tape mechanical data
7/7 STB160NF3LL information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is registered trademark of stmicroelectronics a 2002 stmicroelectronics - all rights reserved all other names are the property of their respective owners. stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com
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